High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4substrates

Pavel Kirilenko, Mohammed A. Najmi, Bei Ma, Artem Shushanian, Martin Velazquez-Rizo, Daisuke Iida, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10-1-2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm-2 in the case of screw-type and edge-type dislocations, respectively.

Original languageEnglish (US)
Article number045011
JournalAIP ADVANCES
Volume13
Issue number4
DOIs
StatePublished - Apr 1 2023

Bibliographical note

Funding Information:
This publication is based upon work supported by King Abdullah University of Science and Technology (KAUST) Research Funding (KRF) (Award Nos. ORA-2022-5313 and BAS/1/1676-01-01). The sample characterization in this work was supported by the Imaging and Characterization Core Lab and the Analytical Chemistry Core Lab of the King Abdullah University of Science and Technology.

Publisher Copyright:
© 2023 Author(s).

ASJC Scopus subject areas

  • General Physics and Astronomy

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