High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

Safdar Nazir; Udo Schwingenschlögl

doi:10.1063/1.3625951

High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

Safdar Nazir, Udo Schwingenschlögl

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

Original language	English (US)
Pages (from-to)	073102
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3625951
State	Published - Aug 15 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3625951

https://repository.kaust.edu.sa/bitstream/10754/314506/1/High%20charge%20carrier%20density%20at%20the%20NaTaO3%20SrTiO3%20hetero-interface.pdf

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title = "High charge carrier density at the NaTaO3/SrTiO3 hetero-interface",

abstract = "The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.",

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AU - Nazir, Safdar

AU - Schwingenschlögl, Udo

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PY - 2011/8/15

Y1 - 2011/8/15

N2 - The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

AB - The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

Abstract

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