Heterogeneous integration of a III-V quantum dot laser on high thermal conductivity silicon carbide

Rosalyn Koscica, Yating Wan*, William He, M. J. Kennedy, John E. Bowers

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III-V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III-V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates with high temperature stability. A large T0 of 221 K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.

Original languageEnglish (US)
Pages (from-to)2539-2542
Number of pages4
JournalOptics Letters
Issue number10
StatePublished - May 15 2023

Bibliographical note

Funding Information:
A portion of this work was performed in the UCSB Nanofabrication Facility. We thank Lin Chang for providing the SiC substrates and Mario Dumont for helpful discussion.

Publisher Copyright:
© 2023 Optica Publishing Group.

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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