Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates

Yara Banda; Seong Ho Cho; Yanqing Jia; Mohamed Ben Hassine; Bambar Davaasuren; Qingxiao Wang; Si Young Bae; Tien Khee Ng; Boon S. Ooi

doi:10.1117/12.3001597

Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates

Yara Banda, Seong Ho Cho, Yanqing Jia, Mohamed Ben Hassine, Bambar Davaasuren, Qingxiao Wang, Si Young Bae, Tien Khee Ng, Boon S. Ooi^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the growth and characterization of κ-Ga₂O₃ films grown at varying temperatures in the range of 450-700 °C by mist-CVD. All of the films are single-crystalline and phase-pure except for the two samples grown at 550 °C and 600 °C, which have (2^̅01)-oriented β-Ga₂O₃ incorporated in them. Unlike the phase-pure films which exhibit hexagonal-shaped grains, the mixed-phase samples have rough and partially coalesced films with irregular-shaped grains due to the presence of two Ga₂O₃ phases growing along two different crystallographic orientations. Moreover, we found that annealing the κ-Ga₂O₃ films at 700 °C in ambient air led to improved crystalline quality and reduced grain size.

Original language	English (US)
Title of host publication	Oxide-Based Materials and Devices XV
Editors	David J. Rogers, Ferechteh H. Teherani
Publisher	SPIE
ISBN (Electronic)	9781510670341
DOIs	https://doi.org/10.1117/12.3001597
State	Published - 2024
Event	Oxide-Based Materials and Devices XV 2024 - San Francisco, United States Duration: Jan 29 2024 → Feb 1 2024

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12887
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices XV 2024
Country/Territory	United States
City	San Francisco
Period	01/29/24 → 02/1/24

Bibliographical note

Publisher Copyright:
© 2024 SPIE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.3001597

Cite this

Banda, Y., Cho, S. H., Jia, Y., Hassine, M. B., Davaasuren, B., Wang, Q., Bae, S. Y., Ng, T. K., & Ooi, B. S. (2024). Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates. In D. J. Rogers, & F. H. Teherani (Eds.), Oxide-Based Materials and Devices XV Article 1288709 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12887). SPIE. https://doi.org/10.1117/12.3001597

@inproceedings{bf596f0370fb412f81df9d5c12f40500,

title = "Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates",

abstract = "We report on the growth and characterization of κ-Ga2O3 films grown at varying temperatures in the range of 450-700 °C by mist-CVD. All of the films are single-crystalline and phase-pure except for the two samples grown at 550 °C and 600 °C, which have (2̅01)-oriented β-Ga2O3 incorporated in them. Unlike the phase-pure films which exhibit hexagonal-shaped grains, the mixed-phase samples have rough and partially coalesced films with irregular-shaped grains due to the presence of two Ga2O3 phases growing along two different crystallographic orientations. Moreover, we found that annealing the κ-Ga2O3 films at 700 °C in ambient air led to improved crystalline quality and reduced grain size.",

author = "Yara Banda and Cho, {Seong Ho} and Yanqing Jia and Hassine, {Mohamed Ben} and Bambar Davaasuren and Qingxiao Wang and Bae, {Si Young} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "Publisher Copyright: {\textcopyright} 2024 SPIE.; Oxide-Based Materials and Devices XV 2024 ; Conference date: 29-01-2024 Through 01-02-2024",

year = "2024",

doi = "10.1117/12.3001597",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, {David J.} and Teherani, {Ferechteh H.}",

booktitle = "Oxide-Based Materials and Devices XV",

address = "United States",

}

Banda, Y, Cho, SH, Jia, Y , Hassine, MB , Davaasuren, B , Wang, Q, Bae, SY, Ng, TK & Ooi, BS 2024, Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates. in DJ Rogers & FH Teherani (eds), Oxide-Based Materials and Devices XV., 1288709, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12887, SPIE, Oxide-Based Materials and Devices XV 2024, San Francisco, United States, 01/29/24. https://doi.org/10.1117/12.3001597

Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates. / Banda, Yara; Cho, Seong Ho; Jia, Yanqing et al.
Oxide-Based Materials and Devices XV. ed. / David J. Rogers; Ferechteh H. Teherani. SPIE, 2024. 1288709 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12887).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates

AU - Banda, Yara

AU - Cho, Seong Ho

AU - Jia, Yanqing

AU - Hassine, Mohamed Ben

AU - Davaasuren, Bambar

AU - Wang, Qingxiao

AU - Bae, Si Young

AU - Ng, Tien Khee

AU - Ooi, Boon S.

PY - 2024

Y1 - 2024

N2 - We report on the growth and characterization of κ-Ga2O3 films grown at varying temperatures in the range of 450-700 °C by mist-CVD. All of the films are single-crystalline and phase-pure except for the two samples grown at 550 °C and 600 °C, which have (2̅01)-oriented β-Ga2O3 incorporated in them. Unlike the phase-pure films which exhibit hexagonal-shaped grains, the mixed-phase samples have rough and partially coalesced films with irregular-shaped grains due to the presence of two Ga2O3 phases growing along two different crystallographic orientations. Moreover, we found that annealing the κ-Ga2O3 films at 700 °C in ambient air led to improved crystalline quality and reduced grain size.

AB - We report on the growth and characterization of κ-Ga2O3 films grown at varying temperatures in the range of 450-700 °C by mist-CVD. All of the films are single-crystalline and phase-pure except for the two samples grown at 550 °C and 600 °C, which have (2̅01)-oriented β-Ga2O3 incorporated in them. Unlike the phase-pure films which exhibit hexagonal-shaped grains, the mixed-phase samples have rough and partially coalesced films with irregular-shaped grains due to the presence of two Ga2O3 phases growing along two different crystallographic orientations. Moreover, we found that annealing the κ-Ga2O3 films at 700 °C in ambient air led to improved crystalline quality and reduced grain size.

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U2 - 10.1117/12.3001597

DO - 10.1117/12.3001597

M3 - Conference contribution

AN - SCOPUS:85197251330

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices XV

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

PB - SPIE

T2 - Oxide-Based Materials and Devices XV 2024

Y2 - 29 January 2024 through 1 February 2024

ER -

Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates

Abstract

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