Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

Dajun Yuan; Rui Guo; Yaguang Wei; Wenzhuo Wu; Yong Ding; Zhong Lin Wang; Suman Das

doi:10.1002/adfm.201001058

Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

Dajun Yuan, Rui Guo, Yaguang Wei, Wenzhuo Wu, Yong Ding, Zhong Lin Wang, Suman Das

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	3484-3489
Number of pages	6
Journal	Advanced Functional Materials
Volume	20
Issue number	20
DOIs	https://doi.org/10.1002/adfm.201001058
State	Published - Aug 23 2010
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: D. Yuan and R. Guo contributed equally to this work. Research was supported by the Georgia Institute of Technology, DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08–1–0009), BES DOE (DE-FG02–07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), and the MANA WPI program from NIMS, Japan.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

Access to Document

10.1002/adfm.201001058

Cite this

@article{2f36fdf515a74b97a633a5c46972cb7b,

title = "Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation",

abstract = "A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. {\textcopyright} 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Dajun Yuan and Rui Guo and Yaguang Wei and Wenzhuo Wu and Yong Ding and Wang, {Zhong Lin} and Suman Das",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: D. Yuan and R. Guo contributed equally to this work. Research was supported by the Georgia Institute of Technology, DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08–1–0009), BES DOE (DE-FG02–07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), and the MANA WPI program from NIMS, Japan. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2010",

month = aug,

day = "23",

doi = "10.1002/adfm.201001058",

language = "English (US)",

volume = "20",

pages = "3484--3489",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "Wiley",

number = "20",

}

TY - JOUR

T1 - Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

AU - Yuan, Dajun

AU - Guo, Rui

AU - Wei, Yaguang

AU - Wu, Wenzhuo

AU - Ding, Yong

AU - Wang, Zhong Lin

AU - Das, Suman

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: D. Yuan and R. Guo contributed equally to this work. Research was supported by the Georgia Institute of Technology, DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08–1–0009), BES DOE (DE-FG02–07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), and the MANA WPI program from NIMS, Japan. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2010/8/23

Y1 - 2010/8/23

N2 - A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - http://hdl.handle.net/10754/598451

UR - http://doi.wiley.com/10.1002/adfm.201001058

UR - http://www.scopus.com/inward/record.url?scp=78149450844&partnerID=8YFLogxK

U2 - 10.1002/adfm.201001058

DO - 10.1002/adfm.201001058

M3 - Article

SN - 1616-301X

VL - 20

SP - 3484

EP - 3489

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 20

ER -

Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this