Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Der-Hsien Lien; Yuhsuan Hsiao; Shihguo Yang; Meng-Lin Tsai; Tzuchiao Wei; Sichen Lee; Jr-Hau He

doi:10.1016/j.nanoen.2014.10.013

Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Der-Hsien Lien, Yuhsuan Hsiao, Shihguo Yang, Meng-Lin Tsai, Tzuchiao Wei, Sichen Lee, Jr-Hau He

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

Original language	English (US)
Pages (from-to)	104-109
Number of pages	6
Journal	Nano Energy
Volume	11
DOIs	https://doi.org/10.1016/j.nanoen.2014.10.013
State	Published - Jan 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nanoen.2014.10.013

Cite this

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title = "Harsh photovoltaics using InGaN/GaN multiple quantum well schemes",

abstract = "Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.",

author = "Der-Hsien Lien and Yuhsuan Hsiao and Shihguo Yang and Meng-Lin Tsai and Tzuchiao Wei and Sichen Lee and Jr-Hau He",

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T1 - Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

AU - Lien, Der-Hsien

AU - Hsiao, Yuhsuan

AU - Yang, Shihguo

AU - Tsai, Meng-Lin

AU - Wei, Tzuchiao

AU - Lee, Sichen

AU - He, Jr-Hau

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/1

Y1 - 2015/1

N2 - Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

AB - Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

UR - http://hdl.handle.net/10754/563983

UR - https://linkinghub.elsevier.com/retrieve/pii/S2211285514200140

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DO - 10.1016/j.nanoen.2014.10.013

M3 - Article

SN - 2211-2855

VL - 11

SP - 104

EP - 109

JO - Nano Energy

JF - Nano Energy

ER -

Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Abstract

Bibliographical note

ASJC Scopus subject areas

UN SDGs

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