Hafnium-based thin oxides: Versatile insulators for microelectronics

Keyphrases

• Oxides 100%
• Microelectronics 100%
• Resistive Switching 100%
• Insulator 100%
• Thin Oxide Films 100%
• Hafnium 100%
• Transistor 50%
• Electrical Performance 50%
• Memory Cells 50%
• Fabrication Technology 50%
• Unique Properties 50%
• HfO2 50%
• Conductive Filament 50%
• Memory Technology 50%
• Grain Boundary 50%
• Resistive Random Access Memory (ReRAM) 50%
• Leakage Current 50%
• Random Access Memory 50%
• Low Resistance State 50%
• Resistivity Change 50%
• Defect Accumulation 50%
• High Resistive State 50%
• High Lateral Resolution 50%

Material Science

• Hafnium 100%
• Microelectronics 100%
• Oxide Compound 100%
• Resistive Random-Access Memory 33%
• Electrical Resistivity 33%
• Transistor 33%
• Grain Boundary 33%