Abstract
Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010cm -2, which represents the highest QDs density reported for nitride-based QDs.
Original language | English (US) |
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Title of host publication | Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
Subtitle of host publication | 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 |
State | Published - 2010 |
Externally published | Yes |
Event | Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010 |
Other
Other | Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 |
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Country/Territory | United States |
City | San Jose, CA |
Period | 05/16/10 → 05/21/10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation