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Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile
Hongping Zhao*, Guangyu Liu, Xiao Hang Li, G. S. Huang, Jonathan D. Poplawsky, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
184
Scopus
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