Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Hongping Zhao; Guangyu Liu; Xiao Hang Li; G. S. Huang; Jonathan D. Poplawsky; S. Tafon Penn; Volkmar Dierolf; Nelson Tansu

doi:10.1063/1.3204446

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Hongping Zhao^*, Guangyu Liu, Xiao Hang Li, G. S. Huang, Jonathan D. Poplawsky, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

184 Scopus citations

Abstract

Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

Original language	English (US)
Article number	061104
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3204446
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile",

abstract = "Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.",

author = "Hongping Zhao and Guangyu Liu and Li, {Xiao Hang} and Huang, {G. S.} and Poplawsky, {Jonathan D.} and Penn, {S. Tafon} and Volkmar Dierolf and Nelson Tansu",

year = "2009",

doi = "10.1063/1.3204446",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

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T1 - Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Li, Xiao Hang

AU - Huang, G. S.

AU - Poplawsky, Jonathan D.

AU - Penn, S. Tafon

AU - Dierolf, Volkmar

AU - Tansu, Nelson

PY - 2009

Y1 - 2009

N2 - Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

AB - Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

UR - http://www.scopus.com/inward/record.url?scp=69049114017&partnerID=8YFLogxK

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061104

ER -

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

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