Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)