Growth of ReS2 thin films by pulsed laser deposition

B. Vishal*, H. Sharona, U. Bhat, A. Paul, M. B. Sreedhara, V. Rajaji, S. C. Sarma, C. Narayana, S. C. Peter, R. Datta

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 ⊥ (0001)Al2O3 and (0001)ReS2 ⊥ (0001)MoS2 ∥ (0001)Al2O3 at deposition temperature below 300 °C. Films are polycrystalline grown at temperature above 300 °C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 thin film over large area (10 × 10 mm2) for practical device application.

Original languageEnglish (US)
Pages (from-to)81-87
Number of pages7
JournalThin Solid Films
Volume685
DOIs
StatePublished - Sep 1 2019

Bibliographical note

Funding Information:
The authors sincerely acknowledge International Centre for Materials Science (ICMS), JNCASR, INDIA for the research funding and advanced characterization facilities.

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

  • 2D materials
  • Molybdenum disulphide
  • Rhenium disulphide
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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