Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition

Muhammad Jamil; Tianming Xu; Tahir Zaidi; Andrew Melton; Balakrishnam Jampana; Chee Loon Tan; Boon S. Ooi; Ian T. Ferguson

doi:10.1002/pssa.200925462

Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition

Muhammad Jamil^*, Tianming Xu, Tahir Zaidi, Andrew Melton, Balakrishnam Jampana, Chee Loon Tan, Boon S. Ooi, Ian T. Ferguson

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.168 for the InN (0002) v rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is ∼0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.

Original language	English (US)
Pages (from-to)	1895-1899
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	207
Issue number	8
DOIs	https://doi.org/10.1002/pssa.200925462
State	Published - Aug 2010

Keywords

III-nitrides
InN
MOCVD
Nicopyramids

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition",

abstract = "We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.168 for the InN (0002) v rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is ∼0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.",

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language = "English (US)",

volume = "207",

pages = "1895--1899",

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T1 - Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition

AU - Jamil, Muhammad

AU - Xu, Tianming

AU - Zaidi, Tahir

AU - Melton, Andrew

AU - Jampana, Balakrishnam

AU - Tan, Chee Loon

AU - Ooi, Boon S.

AU - Ferguson, Ian T.

PY - 2010/8

Y1 - 2010/8

N2 - We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.168 for the InN (0002) v rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is ∼0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.

AB - We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.168 for the InN (0002) v rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is ∼0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.

KW - III-nitrides

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KW - MOCVD

KW - Nicopyramids

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M3 - Article

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JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 8

ER -

Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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