Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity

Ming-Hui Chiu, Xiang Ji, Tianyi Zhang, Nannan Mao, Yue Luo, Chuqiao Shi, Xudong Zheng, Hongwei Liu, Yimo Han, William L. Wilson, Zhengtang Luo, Vincent Tung, Jing Kong

Research output: Contribution to journalArticlepeer-review


Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (
Original languageEnglish (US)
Pages (from-to)2201031
JournalAdvanced Electronic Materials
StatePublished - Feb 14 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-02-21
Acknowledgements: M.-H.C., X.J., and T.Z. contributed equally to this work. X.J. and J.K. acknowledge the support from the U.S. Army Research Office (ARO) MURI project under grant number W911NF-18-1-0431 and the US Army Research Office through the Institute for Soldier Nanotechnologies at MIT, under cooperative agreement no. W911NF-18-2-0048. T.Z., X.Z. and J.K. acknowledge the support by the U.S. Department of Energy (DOE), Office of Science, and Basic Energy Sciences (BES) under award DE-SC0020042. N.M. and J.K. acknowledge the support by the STC Center for Integrated Quantum Materials, NSF grant number DMR-1231319. C.S. and Y.H. acknowledge the support from Welch Foundation (C-2065-20210327). The authors acknowledge the use of the Electron Microscopy Center at Rice.


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