Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity

Ming-Hui Chiu; Xiang Ji; Tianyi Zhang; Nannan Mao; Yue Luo; Chuqiao Shi; Xudong Zheng; Hongwei Liu; Yimo Han; William L. Wilson; Zhengtang Luo; Vincent Tung; Jing Kong

doi:10.1002/aelm.202201031

Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity

Ming-Hui Chiu, Xiang Ji, Tianyi Zhang, Nannan Mao, Yue Luo, Chuqiao Shi, Xudong Zheng, Hongwei Liu, Yimo Han, William L. Wilson, Zhengtang Luo, Vincent Tung, Jing Kong

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Abstract

Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (

Original language	English (US)
Pages (from-to)	2201031
Journal	Advanced Electronic Materials
DOIs	https://doi.org/10.1002/aelm.202201031
State	Published - Feb 14 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-02-21
Acknowledgements: M.-H.C., X.J., and T.Z. contributed equally to this work. X.J. and J.K. acknowledge the support from the U.S. Army Research Office (ARO) MURI project under grant number W911NF-18-1-0431 and the US Army Research Office through the Institute for Soldier Nanotechnologies at MIT, under cooperative agreement no. W911NF-18-2-0048. T.Z., X.Z. and J.K. acknowledge the support by the U.S. Department of Energy (DOE), Office of Science, and Basic Energy Sciences (BES) under award DE-SC0020042. N.M. and J.K. acknowledge the support by the STC Center for Integrated Quantum Materials, NSF grant number DMR-1231319. C.S. and Y.H. acknowledge the support from Welch Foundation (C-2065-20210327). The authors acknowledge the use of the Electron Microscopy Center at Rice.

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https://repository.kaust.edu.sa/bitstream/10754/688040/1/Adv%20Elect%20Materials%20-%202023%20-%20Chiu%20-%20Growth%20of%20Large%e2%80%90Sized%202D%20Ultrathin%20SnSe%20Crystals%20with%20In%e2%80%90Plane%20Ferroelectricity.pdf

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@article{3e5842ca32524db5a302ca417026c98c,

title = "Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity",

abstract = "Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (",

author = "Ming-Hui Chiu and Xiang Ji and Tianyi Zhang and Nannan Mao and Yue Luo and Chuqiao Shi and Xudong Zheng and Hongwei Liu and Yimo Han and Wilson, {William L.} and Zhengtang Luo and Vincent Tung and Jing Kong",

note = "KAUST Repository Item: Exported on 2023-02-21 Acknowledgements: M.-H.C., X.J., and T.Z. contributed equally to this work. X.J. and J.K. acknowledge the support from the U.S. Army Research Office (ARO) MURI project under grant number W911NF-18-1-0431 and the US Army Research Office through the Institute for Soldier Nanotechnologies at MIT, under cooperative agreement no. W911NF-18-2-0048. T.Z., X.Z. and J.K. acknowledge the support by the U.S. Department of Energy (DOE), Office of Science, and Basic Energy Sciences (BES) under award DE-SC0020042. N.M. and J.K. acknowledge the support by the STC Center for Integrated Quantum Materials, NSF grant number DMR-1231319. C.S. and Y.H. acknowledge the support from Welch Foundation (C-2065-20210327). The authors acknowledge the use of the Electron Microscopy Center at Rice.",

year = "2023",

month = feb,

day = "14",

doi = "10.1002/aelm.202201031",

language = "English (US)",

pages = "2201031",

journal = "Advanced Electronic Materials",

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T1 - Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity

AU - Chiu, Ming-Hui

AU - Ji, Xiang

AU - Zhang, Tianyi

AU - Mao, Nannan

AU - Luo, Yue

AU - Shi, Chuqiao

AU - Zheng, Xudong

AU - Liu, Hongwei

AU - Han, Yimo

AU - Wilson, William L.

AU - Luo, Zhengtang

AU - Tung, Vincent

AU - Kong, Jing

N1 - KAUST Repository Item: Exported on 2023-02-21 Acknowledgements: M.-H.C., X.J., and T.Z. contributed equally to this work. X.J. and J.K. acknowledge the support from the U.S. Army Research Office (ARO) MURI project under grant number W911NF-18-1-0431 and the US Army Research Office through the Institute for Soldier Nanotechnologies at MIT, under cooperative agreement no. W911NF-18-2-0048. T.Z., X.Z. and J.K. acknowledge the support by the U.S. Department of Energy (DOE), Office of Science, and Basic Energy Sciences (BES) under award DE-SC0020042. N.M. and J.K. acknowledge the support by the STC Center for Integrated Quantum Materials, NSF grant number DMR-1231319. C.S. and Y.H. acknowledge the support from Welch Foundation (C-2065-20210327). The authors acknowledge the use of the Electron Microscopy Center at Rice.

PY - 2023/2/14

Y1 - 2023/2/14

N2 - Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (

AB - Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (

UR - http://hdl.handle.net/10754/688040

UR - https://onlinelibrary.wiley.com/doi/10.1002/aelm.202201031

U2 - 10.1002/aelm.202201031

DO - 10.1002/aelm.202201031

M3 - Article

SN - 2199-160X

SP - 2201031

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

ER -

Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity

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