A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), DARPA STTR with Magnolia Optical Inc., BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), KAUST Global Research Partnership, National Institute For Materials, Japan, Emory-Georgia Tech CCNE from NIH, NSF (DMS 0706436, CMMI 0403671).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.