Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, S. P. DenBaars, James S. Speck

Research output: Contribution to journalArticlepeer-review

14 Scopus citations
Original languageEnglish (US)
Pages (from-to)095119
JournalAIP Advances
Issue number9
StatePublished - Sep 1 2021
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2021-09-28
Acknowledgements: This work was funded by the KACST-KAUST-UCSB Technology transfer program and the Solid State Lighting and Energy Electronics Center (SSLEEC) at UC Santa Barbara; a part of this work was carried out in the California NanoSystems Institute at UCSB. The research reported here made use of shared facilities of the UCSB MRSEC (Grant No. NSF DMR 1720256). A portion of this research was conducted in the UCSB nanofabrication facility, NSF NNIN network (Grant No. ECS-0335765). This work was partially funded by the Academy of Finland, Project No. 315082. The authors would like to gratefully thank Dr. Tom Mates for SIMS measurements and Dr. Stacia Keller and Dr. Mohammed Abo Alreesh for their insightful inputs. In addition, the authors would like to thank Dr. Youli Li from MRL and the cleanroom staff at the UCSB nanofabrication facility for the technical support provided.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

  • General Physics and Astronomy

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