Skip to main navigation
Skip to search
Skip to main content
KAUST PORTAL FOR RESEARCHERS AND STUDENTS Home
Home
Profiles
Research units
Research output
Press/Media
Prizes
Courses
Equipment
Student theses
Datasets
Search by expertise, name or affiliation
Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy
K. Ohkawa
*
, A. Hirako, M. Yoshitani
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
20
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering
Computational Fluid Dynamics
100%
Low-Temperature
50%
Gas-Phase
50%
Growth Condition
50%
Substrate Surface
50%
Buffer Layer
50%
Material Science
Vapor Phase Epitaxy
100%
Computational Fluid Dynamics
66%
Buffer Layer
33%
Hall Mobility
33%
Earth and Planetary Sciences
Vapor Phase Epitaxy
100%
Fluid Dynamics
66%
Dynamic Simulation
33%
Vapor Phase
33%
Physics
Metalorganic Vapor Phase Epitaxy
100%
Computational Fluid Dynamics
66%
Vapor Phase
33%
Keyphrases
Decomposition Ratio
33%
Quality Layers
33%