Abstract
One-, two- and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achieving high quality layers compared to one- and three-flow methods. A GaN layer with high Hall mobility of 360 cm 2/Vs is obtained by two-flow MOVPE growth despite no low-temperature buffer layer. The V/III decomposition ratio of NH 2/GaCH 3 is calculated by CFD simulation in gas phase just on substrate surface. The V/III ratio is in a narrow region to get high-mobility samples.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 621-624 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 188 |
| Issue number | 2 |
| DOIs | |
| State | Published - Nov 2001 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics