Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy

Daisuke Iida, Kensuke Nagata, Takafumi Makino, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Akira Bandoh, Takashi Udagawa

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. © 2010 The Japan Society of Applied Physics.
Original languageEnglish (US)
Issue number7
StatePublished - Jul 1 2010
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Engineering


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