Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy

Daisuke Iida; Kensuke Nagata; Takafumi Makino; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki; Akira Bandoh; Takashi Udagawa

doi:10.1143/APEX.3.075601

Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy

Daisuke Iida, Kensuke Nagata, Takafumi Makino, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Akira Bandoh, Takashi Udagawa

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. © 2010 The Japan Society of Applied Physics.

Original language	English (US)
Journal	APPLIED PHYSICS EXPRESS
Volume	3
Issue number	7
DOIs	https://doi.org/10.1143/APEX.3.075601
State	Published - Jul 1 2010
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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10.1143/APEX.3.075601

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@article{3a05a92fd0904bbe83e25720bff9611e,

title = "Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy",

abstract = "GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. {\textcopyright} 2010 The Japan Society of Applied Physics.",

author = "Daisuke Iida and Kensuke Nagata and Takafumi Makino and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki and Akira Bandoh and Takashi Udagawa",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2010",

month = jul,

day = "1",

doi = "10.1143/APEX.3.075601",

language = "English (US)",

volume = "3",

journal = "APPLIED PHYSICS EXPRESS",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy

AU - Iida, Daisuke

AU - Nagata, Kensuke

AU - Makino, Takafumi

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

AU - Bandoh, Akira

AU - Udagawa, Takashi

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2010/7/1

Y1 - 2010/7/1

N2 - GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. © 2010 The Japan Society of Applied Physics.

AB - GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. © 2010 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.1143/APEX.3.075601

UR - http://www.scopus.com/inward/record.url?scp=77954496053&partnerID=8YFLogxK

U2 - 10.1143/APEX.3.075601

DO - 10.1143/APEX.3.075601

M3 - Article

SN - 1882-0778

VL - 3

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

IS - 7

ER -

Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy

Abstract

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ASJC Scopus subject areas

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