Growth of Broadband Gain Quantum Dot Mode-Locked Laser on Si with Varied InGaAs Well Thickness

Daehwan Jung; Justin Norman; Songtao Liu; Chen Shang; Yating Wan; Arthur Gossard; John Bowers

doi:10.1109/OMN.2019.8925208

Growth of Broadband Gain Quantum Dot Mode-Locked Laser on Si with Varied InGaAs Well Thickness

Daehwan Jung, Justin Norman, Songtao Liu, Chen Shang, Yating Wan, Arthur Gossard, John Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report broadband gain InAs quantum dot mode-locked lasers epitaxially grown on silicon by varying the thickness of InGaAs quantum wells. The peak emission wavelengths of each quantum dot layer are properly tuned in order to enhance the spectral gain bandwidth while maintaining its high optical intensity. A laser with five varied-well-Thickness quantum dots has increased the photoluminescence full-width at half-maximum from 28.6 meV to 43 meV whilst keeping its high intensity. Under mode-locking, the laser shows a 3dB bandwidth of 6.1 nm with 58 comb lines.

Original language	English (US)
Title of host publication	International Conference on Optical MEMS and Nanophotonics
Publisher	IEEE Computer Societyhelp@computer.org
Pages	24-25
Number of pages	2
ISBN (Print)	9781728145013
DOIs	https://doi.org/10.1109/OMN.2019.8925208
State	Published - Jul 1 2019
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

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10.1109/OMN.2019.8925208

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title = "Growth of Broadband Gain Quantum Dot Mode-Locked Laser on Si with Varied InGaAs Well Thickness",

abstract = "We report broadband gain InAs quantum dot mode-locked lasers epitaxially grown on silicon by varying the thickness of InGaAs quantum wells. The peak emission wavelengths of each quantum dot layer are properly tuned in order to enhance the spectral gain bandwidth while maintaining its high optical intensity. A laser with five varied-well-Thickness quantum dots has increased the photoluminescence full-width at half-maximum from 28.6 meV to 43 meV whilst keeping its high intensity. Under mode-locking, the laser shows a 3dB bandwidth of 6.1 nm with 58 comb lines.",

author = "Daehwan Jung and Justin Norman and Songtao Liu and Chen Shang and Yating Wan and Arthur Gossard and John Bowers",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2019",

month = jul,

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doi = "10.1109/OMN.2019.8925208",

language = "English (US)",

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T1 - Growth of Broadband Gain Quantum Dot Mode-Locked Laser on Si with Varied InGaAs Well Thickness

AU - Jung, Daehwan

AU - Norman, Justin

AU - Liu, Songtao

AU - Shang, Chen

AU - Wan, Yating

AU - Gossard, Arthur

AU - Bowers, John

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2019/7/1

Y1 - 2019/7/1

N2 - We report broadband gain InAs quantum dot mode-locked lasers epitaxially grown on silicon by varying the thickness of InGaAs quantum wells. The peak emission wavelengths of each quantum dot layer are properly tuned in order to enhance the spectral gain bandwidth while maintaining its high optical intensity. A laser with five varied-well-Thickness quantum dots has increased the photoluminescence full-width at half-maximum from 28.6 meV to 43 meV whilst keeping its high intensity. Under mode-locking, the laser shows a 3dB bandwidth of 6.1 nm with 58 comb lines.

AB - We report broadband gain InAs quantum dot mode-locked lasers epitaxially grown on silicon by varying the thickness of InGaAs quantum wells. The peak emission wavelengths of each quantum dot layer are properly tuned in order to enhance the spectral gain bandwidth while maintaining its high optical intensity. A laser with five varied-well-Thickness quantum dots has increased the photoluminescence full-width at half-maximum from 28.6 meV to 43 meV whilst keeping its high intensity. Under mode-locking, the laser shows a 3dB bandwidth of 6.1 nm with 58 comb lines.

UR - https://ieeexplore.ieee.org/document/8925208/

UR - http://www.scopus.com/inward/record.url?scp=85077518090&partnerID=8YFLogxK

U2 - 10.1109/OMN.2019.8925208

DO - 10.1109/OMN.2019.8925208

M3 - Conference contribution

SN - 9781728145013

SP - 24

EP - 25

BT - International Conference on Optical MEMS and Nanophotonics

PB - IEEE Computer Societyhelp@computer.org

ER -

Growth of Broadband Gain Quantum Dot Mode-Locked Laser on Si with Varied InGaAs Well Thickness

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