Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

Yasuhiro Isobe; Daisuke Iida; Tatsuyuki Sakakibara; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hiroshi Amano; Mamoru Imade; Yasuo Kitaoka; Yusuke Mori

doi:10.1002/pssa.201001019

Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

Yasuhiro Isobe, Daisuke Iida, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imade, Yasuo Kitaoka, Yusuke Mori

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	1191-1194
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	5
DOIs	https://doi.org/10.1002/pssa.201001019
State	Published - May 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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Isobe, Y., Iida, D., Sakakibara, T., Iwaya, M., Takeuchi, T., Kamiyama, S., Akasaki, I., Amano, H., Imade, M., Kitaoka, Y., & Mori, Y. (2011). Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. Physica Status Solidi (A) Applications and Materials Science, 208(5), 1191-1194. https://doi.org/10.1002/pssa.201001019

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title = "Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method",

abstract = "We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface. {\textcopyright} 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Yasuhiro Isobe and Daisuke Iida and Tatsuyuki Sakakibara and Motoaki Iwaya and Tetsuya Takeuchi and Satoshi Kamiyama and Isamu Akasaki and Hiroshi Amano and Mamoru Imade and Yasuo Kitaoka and Yusuke Mori",

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doi = "10.1002/pssa.201001019",

language = "English (US)",

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Isobe, Y, Iida, D, Sakakibara, T, Iwaya, M, Takeuchi, T, Kamiyama, S, Akasaki, I, Amano, H, Imade, M, Kitaoka, Y & Mori, Y 2011, 'Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method', Physica Status Solidi (A) Applications and Materials Science, vol. 208, no. 5, pp. 1191-1194. https://doi.org/10.1002/pssa.201001019

TY - JOUR

T1 - Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

AU - Isobe, Yasuhiro

AU - Iida, Daisuke

AU - Sakakibara, Tatsuyuki

AU - Iwaya, Motoaki

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

AU - Amano, Hiroshi

AU - Imade, Mamoru

AU - Kitaoka, Yasuo

AU - Mori, Yusuke

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2011/5/1

Y1 - 2011/5/1

N2 - We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssa.201001019

UR - http://www.scopus.com/inward/record.url?scp=79955910854&partnerID=8YFLogxK

U2 - 10.1002/pssa.201001019

DO - 10.1002/pssa.201001019

M3 - Article

SN - 1862-6300

VL - 208

SP - 1191

EP - 1194

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 5

ER -

Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

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