Growth mechanism of ALD-TiN and the thickness dependence of work function

K. Choi; P. Lysaght; H. Alshareef; H. C. Wen; C. Huffman; R. Harris; H. Luan; K. Matthews; P. Majhi; B. H. Lee

doi:10.1109/VTSA.2005.1497096

Growth mechanism of ALD-TiN and the thickness dependence of work function

K. Choi^*, P. Lysaght, H. Alshareef, H. C. Wen, C. Huffman, R. Harris, H. Luan, K. Matthews, P. Majhi, B. H. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We investigated the growth mechanism and work function of ALD-TiN film on SiO₂ and HfSiO films to understand how the workfunction is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.

Original language	English (US)
Title of host publication	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages	103-104
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2005.1497096
State	Published - 2005
Externally published	Yes
Event	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China Duration: Apr 25 2005 → Apr 27 2005

Publication series

Name	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	04/25/05 → 04/27/05

ASJC Scopus subject areas

General Engineering

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10.1109/VTSA.2005.1497096

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Choi, K., Lysaght, P., Alshareef, H., Wen, H. C., Huffman, C., Harris, R., Luan, H., Matthews, K., Majhi, P., & Lee, B. H. (2005). Growth mechanism of ALD-TiN and the thickness dependence of work function. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (pp. 103-104). Article T65 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). https://doi.org/10.1109/VTSA.2005.1497096

Choi, K. ; Lysaght, P. ; Alshareef, H. et al. / Growth mechanism of ALD-TiN and the thickness dependence of work function. 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. pp. 103-104 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

@inproceedings{2274607388aa44dd9c18eea365a91160,

title = "Growth mechanism of ALD-TiN and the thickness dependence of work function",

abstract = "We investigated the growth mechanism and work function of ALD-TiN film on SiO2 and HfSiO films to understand how the workfunction is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.",

author = "K. Choi and P. Lysaght and H. Alshareef and Wen, {H. C.} and C. Huffman and R. Harris and H. Luan and K. Matthews and P. Majhi and Lee, {B. H.}",

year = "2005",

doi = "10.1109/VTSA.2005.1497096",

language = "English (US)",

isbn = "078039058X",

series = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers",

pages = "103--104",

booktitle = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers",

note = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH ; Conference date: 25-04-2005 Through 27-04-2005",

}

Choi, K, Lysaght, P, Alshareef, H, Wen, HC, Huffman, C, Harris, R, Luan, H, Matthews, K, Majhi, P & Lee, BH 2005, Growth mechanism of ALD-TiN and the thickness dependence of work function. in 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers., T65, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers, pp. 103-104, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Hsinchu, Taiwan, Province of China, 04/25/05. https://doi.org/10.1109/VTSA.2005.1497096

Growth mechanism of ALD-TiN and the thickness dependence of work function. / Choi, K.; Lysaght, P.; Alshareef, H. et al.
2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 103-104 T65 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth mechanism of ALD-TiN and the thickness dependence of work function

AU - Choi, K.

AU - Lysaght, P.

AU - Alshareef, H.

AU - Wen, H. C.

AU - Huffman, C.

AU - Harris, R.

AU - Luan, H.

AU - Matthews, K.

AU - Majhi, P.

AU - Lee, B. H.

PY - 2005

Y1 - 2005

N2 - We investigated the growth mechanism and work function of ALD-TiN film on SiO2 and HfSiO films to understand how the workfunction is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.

AB - We investigated the growth mechanism and work function of ALD-TiN film on SiO2 and HfSiO films to understand how the workfunction is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.

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DO - 10.1109/VTSA.2005.1497096

M3 - Conference contribution

AN - SCOPUS:27144493742

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T3 - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

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BT - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers

T2 - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH

Y2 - 25 April 2005 through 27 April 2005

ER -

Choi K, Lysaght P, Alshareef H, Wen HC, Huffman C, Harris R et al. Growth mechanism of ALD-TiN and the thickness dependence of work function. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 103-104. T65. (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). doi: 10.1109/VTSA.2005.1497096

Growth mechanism of ALD-TiN and the thickness dependence of work function

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