Growth behavior of AlInGaN films

J. Z. Shang; B. P. Zhang; M. H. Mao; L. E. Cai; J. Y. Zhang; Z. L. Fang; B. L. Liu; J. Z. Yu; Q. M. Wang; K. Kusakabe; K. Ohkawa

doi:10.1016/j.jcrysgro.2008.09.012

Growth behavior of AlInGaN films

J. Z. Shang, B. P. Zhang^*, M. H. Mao, L. E. Cai, J. Y. Zhang, Z. L. Fang, B. L. Liu, J. Z. Yu, Q. M. Wang, K. Kusakabe, K. Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers.

Original language	English (US)
Pages (from-to)	474-477
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.012
State	Published - Jan 15 2009
Externally published	Yes

Keywords

A1. Scanning electron microscope
A1. Strain
A1. X-ray diffraction
B1. AlInGaN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.09.012

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@article{f215398afd634a5d8f0c7f33af451cab,

title = "Growth behavior of AlInGaN films",

abstract = "The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers.",

keywords = "A1. Scanning electron microscope, A1. Strain, A1. X-ray diffraction, B1. AlInGaN",

author = "Shang, {J. Z.} and Zhang, {B. P.} and Mao, {M. H.} and Cai, {L. E.} and Zhang, {J. Y.} and Fang, {Z. L.} and Liu, {B. L.} and Yu, {J. Z.} and Wang, {Q. M.} and K. Kusakabe and K. Ohkawa",

year = "2009",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2008.09.012",

language = "English (US)",

volume = "311",

pages = "474--477",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Growth behavior of AlInGaN films

AU - Shang, J. Z.

AU - Zhang, B. P.

AU - Mao, M. H.

AU - Cai, L. E.

AU - Zhang, J. Y.

AU - Fang, Z. L.

AU - Liu, B. L.

AU - Yu, J. Z.

AU - Wang, Q. M.

AU - Kusakabe, K.

AU - Ohkawa, K.

PY - 2009/1/15

Y1 - 2009/1/15

N2 - The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers.

AB - The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers.

KW - A1. Scanning electron microscope

KW - A1. Strain

KW - A1. X-ray diffraction

KW - B1. AlInGaN

UR - http://www.scopus.com/inward/record.url?scp=59749105764&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.09.012

DO - 10.1016/j.jcrysgro.2008.09.012

M3 - Article

AN - SCOPUS:59749105764

SN - 0022-0248

VL - 311

SP - 474

EP - 477

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Growth behavior of AlInGaN films

Abstract

Keywords

ASJC Scopus subject areas

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