Growth and structural characterization of SiGe nanorings

J. H. He; C. Y. Chen; C. H. Ho; C. W. Wang; M. J. Chen; L. J. Chen

doi:10.1021/jp9081382

Growth and structural characterization of SiGe nanorings

J. H. He, C. Y. Chen, C. H. Ho, C. W. Wang, M. J. Chen, L. J. Chen

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Self-assembled single-crystalline Si_1?xGe_x nanorings (NRs), as small as 10 nm with narrow distributions of height and diameter, have been fabricated without any specific equipment. Compared to other approaches for nanofabricating the ring-like structures, the smallest Si_1?xGe _x NRs with the highest density were obtained by the mediation of Au nanodots. The process promises the availability of Si_1?xGe _x NRs with a wide range of Ge concentration and size, and can serve as a useful platform for the fundamental understanding and future practical applications of NR devices.

Original language	English (US)
Pages (from-to)	5727-5731
Number of pages	5
Journal	JOURNAL OF PHYSICAL CHEMISTRY C
Volume	114
Issue number	13
DOIs	https://doi.org/10.1021/jp9081382
State	Published - Apr 8 2010
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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title = "Growth and structural characterization of SiGe nanorings",

abstract = "Self-assembled single-crystalline Si1?xGex nanorings (NRs), as small as 10 nm with narrow distributions of height and diameter, have been fabricated without any specific equipment. Compared to other approaches for nanofabricating the ring-like structures, the smallest Si1?xGe x NRs with the highest density were obtained by the mediation of Au nanodots. The process promises the availability of Si1?xGe x NRs with a wide range of Ge concentration and size, and can serve as a useful platform for the fundamental understanding and future practical applications of NR devices.",

author = "He, {J. H.} and Chen, {C. Y.} and Ho, {C. H.} and Wang, {C. W.} and Chen, {M. J.} and Chen, {L. J.}",

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T1 - Growth and structural characterization of SiGe nanorings

AU - He, J. H.

AU - Chen, C. Y.

AU - Ho, C. H.

AU - Wang, C. W.

AU - Chen, M. J.

AU - Chen, L. J.

PY - 2010/4/8

Y1 - 2010/4/8

N2 - Self-assembled single-crystalline Si1?xGex nanorings (NRs), as small as 10 nm with narrow distributions of height and diameter, have been fabricated without any specific equipment. Compared to other approaches for nanofabricating the ring-like structures, the smallest Si1?xGe x NRs with the highest density were obtained by the mediation of Au nanodots. The process promises the availability of Si1?xGe x NRs with a wide range of Ge concentration and size, and can serve as a useful platform for the fundamental understanding and future practical applications of NR devices.

AB - Self-assembled single-crystalline Si1?xGex nanorings (NRs), as small as 10 nm with narrow distributions of height and diameter, have been fabricated without any specific equipment. Compared to other approaches for nanofabricating the ring-like structures, the smallest Si1?xGe x NRs with the highest density were obtained by the mediation of Au nanodots. The process promises the availability of Si1?xGe x NRs with a wide range of Ge concentration and size, and can serve as a useful platform for the fundamental understanding and future practical applications of NR devices.

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JF - JOURNAL OF PHYSICAL CHEMISTRY C

IS - 13

ER -

Growth and structural characterization of SiGe nanorings

Abstract

ASJC Scopus subject areas

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