TY - JOUR
T1 - Green synthesis of CuxO nanoscale MOS capacitors processed at low temperatures
AU - Al-Shehri, Safeyah
AU - Al-Senany, Norah
AU - Altuwirqi, Reem
AU - Bayahya, Amani
AU - Alshammari, Fwzah Hamud
AU - Wang, Zhenwei
AU - Al-Jawhari, Hala
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank Dr. Mohamed N. Hedhili and Fan Zhang for their help with the XPS and TEM measurements, respectively.
PY - 2017/1/10
Y1 - 2017/1/10
N2 - In this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 °C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density.
AB - In this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 °C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density.
UR - http://hdl.handle.net/10754/622679
UR - http://www.sciencedirect.com/science/article/pii/S0257897217300282
UR - http://www.scopus.com/inward/record.url?scp=85009452499&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2017.01.028
DO - 10.1016/j.surfcoat.2017.01.028
M3 - Article
SN - 0257-8972
VL - 320
SP - 246
EP - 251
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
ER -