The performance of multiple quantum well green and yellow semipolar light-emitting diodes (LEDs) is limited by relaxation of highly strained InGaN-based active regions and the subsequent formation of nonradiative defects. Limited area epitaxy was used to block glide of substrate threading dislocations and to reduce the density of misfit dislocations (MDs) directly beneath the active region of (2021) LEDs. Devices were grown and fabricated on a 1D array of narrow substrate mesas to limit the MD run length. Reducing the mesa width from 20 μm to 5 μm lowered the density of basal plane and non-basal plane MDs on the mesas and limited the number of defect-generating dislocation intersections. This improvement in material quality yielded a 73% enhancement in peak external quantum efficiency for the devices with the narrowest mesas compared to the devices with the widest mesas.
|Original language||English (US)|
|Journal||APPLIED PHYSICS LETTERS|
|State||Published - Jul 29 2016|
Bibliographical noteKAUST Repository Item: Exported on 2022-06-01
Acknowledgements: This work was supported by the Solid State Lighting & Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF funded National Nanotechnology Infrastructure Network (ECS-03357650). This work made use of the Materials Research Lab (MRL) Central Facilities at UCSB supported by the Materials Research Science and Engineering Center program of the NSF under Award No. DMR 1121053. C. D. Pynn was supported by the NSF Graduate Research Fellowship Program under Grant No. DGE 1144085. H. Gardner was supported by the CISEI program through the UCSB MRL and the International Center for Materials Research under NSF Award No. DMR 0843934.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)