Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda*, Arokia Nathan, Paul Wöbkenberg, Florian Colleaux, Khashayar Ghaffarzadeh, Thomas D. Anthopoulos, Manish Chhowalla

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

Original languageEnglish (US)
Article number133108
JournalApplied Physics Letters
Volume102
Issue number13
DOIs
StatePublished - Apr 1 2013
Externally publishedYes

Bibliographical note

Funding Information:
G.E. acknowledges the Royal Society for the Newton International Fellowship and financial support from the Centre for Advanced Structural Ceramics (CASC) at Imperial College London. G.E. also acknowledges Singapore National Research Foundation for partly funding the research under NRF Research Fellowship (NRF-NRFF2011-02). M.C. acknowledges support from NSF ECCS Award 1128335.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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