Graphene nanoplatelets embedded in HfO2 for MOS memory

N. El-Atab; B. B. Turgut; A. K. Okyay; A. Nayfeh

doi:10.1149/06614.0039ecst

Graphene nanoplatelets embedded in HfO₂ for MOS memory

N. El-Atab, B. B. Turgut, A. K. Okyay, A. Nayfeh

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al₂O₃/HfO₂ tunnel oxide is demonstrated. Using C-V_gate measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices.

Original language	English (US)
Title of host publication	Graphene and Beyond
Subtitle of host publication	2D Materials
Editors	H. Grebel, Y. S. Obeng, R. Martel, A. Hirsch, M. S. Arnold, V. Di Noto
Publisher	Electrochemical Society, Inc.
Pages	39-43
Number of pages	5
Edition	14
ISBN (Electronic)	9781607686378
DOIs	https://doi.org/10.1149/06614.0039ecst
State	Published - 2015
Event	Symposium on Graphene and Beyond: 2D Materials - 227th ECS Meeting - Chicago, United States Duration: May 24 2015 → May 28 2015

Publication series

Name	ECS Transactions
Number	14
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Graphene and Beyond: 2D Materials - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	05/24/15 → 05/28/15

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/06614.0039ecst

Cite this

@inproceedings{95347097a1e34644a76d7b8552cfd143,

title = "Graphene nanoplatelets embedded in HfO2 for MOS memory",

abstract = "In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al2O3/HfO2 tunnel oxide is demonstrated. Using C-Vgate measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices.",

author = "N. El-Atab and Turgut, {B. B.} and Okyay, {A. K.} and A. Nayfeh",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Graphene and Beyond: 2D Materials - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",

year = "2015",

doi = "10.1149/06614.0039ecst",

language = "English (US)",

series = "ECS Transactions",

publisher = "Electrochemical Society, Inc.",

number = "14",

pages = "39--43",

editor = "H. Grebel and Obeng, {Y. S.} and R. Martel and A. Hirsch and Arnold, {M. S.} and {Di Noto}, V.",

booktitle = "Graphene and Beyond",

address = "United States",

edition = "14",

}

El-Atab, N, Turgut, BB, Okyay, AK & Nayfeh, A 2015, Graphene nanoplatelets embedded in HfO₂ for MOS memory. in H Grebel, YS Obeng, R Martel, A Hirsch, MS Arnold & V Di Noto (eds), Graphene and Beyond: 2D Materials. 14 edn, ECS Transactions, no. 14, vol. 66, Electrochemical Society, Inc., pp. 39-43, Symposium on Graphene and Beyond: 2D Materials - 227th ECS Meeting, Chicago, United States, 05/24/15. https://doi.org/10.1149/06614.0039ecst

Graphene nanoplatelets embedded in HfO₂ for MOS memory. / El-Atab, N.; Turgut, B. B.; Okyay, A. K. et al.
Graphene and Beyond: 2D Materials. ed. / H. Grebel; Y. S. Obeng; R. Martel; A. Hirsch; M. S. Arnold; V. Di Noto. 14. ed. Electrochemical Society, Inc., 2015. p. 39-43 (ECS Transactions; Vol. 66, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - El-Atab, N.

AU - Turgut, B. B.

AU - Okyay, A. K.

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N2 - In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al2O3/HfO2 tunnel oxide is demonstrated. Using C-Vgate measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices.

AB - In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al2O3/HfO2 tunnel oxide is demonstrated. Using C-Vgate measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices.

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