Graphene-GaAs/Alx Ga1-x As heterostructure dual-function field-effect transistor

Chiu Chun Tang; Ming Yang Li; L. J. Li; C. C. Chi; Jeng Chung Chen

doi:10.1063/1.4767387

Graphene-GaAs/Al_x Ga_1-x As heterostructure dual-function field-effect transistor

Chiu Chun Tang^*, Ming Yang Li, L. J. Li, C. C. Chi, Jeng Chung Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We have integrated chemical vapor-deposited graphene and GaAs/Al _x Ga_1-x As heterostructure into a hybrid field effect transistor (FET). Depending on the operation scheme, graphene can be utilized either as a gate electrode for a GaAs-based high electron mobility transistor (HEMT) or as a channel material gated by two dimensional electron gas (2DEG) formed in the interface of a heterojunction. Our studies reveal that 2DEG can function as an effective back-electrode to tune the ambipolar effect of graphene. The performance of graphene FET (GFET) is limited by the interface band bending of the heterojunction associated with the gating voltages and the intrinsic surface morphology of GaAs substrate. Our results bode a way to implement HEMT/GEFT-based bi-FET integrated circuits.

Original language	English (US)
Article number	202104
Journal	Applied Physics Letters
Volume	101
Issue number	20
DOIs	https://doi.org/10.1063/1.4767387
State	Published - Nov 12 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Graphene-GaAs/Alx Ga1-x As heterostructure dual-function field-effect transistor",

abstract = "We have integrated chemical vapor-deposited graphene and GaAs/Al x Ga1-x As heterostructure into a hybrid field effect transistor (FET). Depending on the operation scheme, graphene can be utilized either as a gate electrode for a GaAs-based high electron mobility transistor (HEMT) or as a channel material gated by two dimensional electron gas (2DEG) formed in the interface of a heterojunction. Our studies reveal that 2DEG can function as an effective back-electrode to tune the ambipolar effect of graphene. The performance of graphene FET (GFET) is limited by the interface band bending of the heterojunction associated with the gating voltages and the intrinsic surface morphology of GaAs substrate. Our results bode a way to implement HEMT/GEFT-based bi-FET integrated circuits.",

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AU - Tang, Chiu Chun

AU - Li, Ming Yang

AU - Li, L. J.

AU - Chi, C. C.

AU - Chen, Jeng Chung

PY - 2012/11/12

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N2 - We have integrated chemical vapor-deposited graphene and GaAs/Al x Ga1-x As heterostructure into a hybrid field effect transistor (FET). Depending on the operation scheme, graphene can be utilized either as a gate electrode for a GaAs-based high electron mobility transistor (HEMT) or as a channel material gated by two dimensional electron gas (2DEG) formed in the interface of a heterojunction. Our studies reveal that 2DEG can function as an effective back-electrode to tune the ambipolar effect of graphene. The performance of graphene FET (GFET) is limited by the interface band bending of the heterojunction associated with the gating voltages and the intrinsic surface morphology of GaAs substrate. Our results bode a way to implement HEMT/GEFT-based bi-FET integrated circuits.

AB - We have integrated chemical vapor-deposited graphene and GaAs/Al x Ga1-x As heterostructure into a hybrid field effect transistor (FET). Depending on the operation scheme, graphene can be utilized either as a gate electrode for a GaAs-based high electron mobility transistor (HEMT) or as a channel material gated by two dimensional electron gas (2DEG) formed in the interface of a heterojunction. Our studies reveal that 2DEG can function as an effective back-electrode to tune the ambipolar effect of graphene. The performance of graphene FET (GFET) is limited by the interface band bending of the heterojunction associated with the gating voltages and the intrinsic surface morphology of GaAs substrate. Our results bode a way to implement HEMT/GEFT-based bi-FET integrated circuits.

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Graphene-GaAs/Al_x Ga_1-x As heterostructure dual-function field-effect transistor

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