Graphene and Related Materials for Resistive Random Access Memories

Keyphrases

• Graphene 100%
• Resistive Random Access Memory (ReRAM) 100%
• Material-based 33%
• Dielectric 33%
• Graphene Oxide 16%
• Hexagonal Boron Nitride (h-BN) 16%
• Power Consumption 16%
• Energy Consumption Reduction 16%
• Technology-based 16%
• Device Integration 16%
• Low-voltage Operation 16%
• Atomic Diffusion 16%
• Resistive Switching 16%
• Conductive Filament 16%
• Non-volatile Memory 16%
• Transition Metal Dichalcogenides 16%
• Reliability Analysis 16%
• Interface Layer 16%
• Adjacent Layers 16%
• Technological Requirements 16%
• Metallic Ions 16%
• Amorphous Carbon Film 16%
• Variability Analysis 16%
• Black Phosphorous 16%

Engineering

• Resistive Random Access Memory 100%
• Graphene 100%
• Dielectrics 33%
• Electric Power Utilization 16%
• Reduce Power Consumption 16%
• Operating Voltage 16%
• Promising Candidate 16%
• Interface Layer 16%
• Nonvolatile Memory 16%
• Nitride 16%
• Resistive 16%
• Amorphous Carbon 16%
• Graphene Oxide 16%
• Surface Effect 16%
• Conductive Filament 16%
• Adjacent Layer 16%
• Analyse Variability 16%
• Atomic Diffusion 16%
• Transition Metal Dichalcogenide 16%

Material Science

• Resistive Random-Access Memory 100%
• Graphene 100%
• Dielectric Material 33%
• Device Integration 16%
• Amorphous Carbon 16%
• Carbon Films 16%
• Boron Nitride 16%
• Graphene Oxide 16%
• Transition Metal Dichalcogenides 16%