Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih-Pin Lin; Li-Syuan Lyu; Ching-Ting Lin; Pang-Shiuan Liu; Wen-Hao Chang; Lain-Jong Li; Tuo-Hung Hou

doi:10.1109/IPFA.2015.7224436

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih-Pin Lin, Li-Syuan Lyu, Ching-Ting Lin, Pang-Shiuan Liu, Wen-Hao Chang, Lain-Jong Li, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

Original language	English (US)
Title of host publication	2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	476-479
Number of pages	4
ISBN (Print)	9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224436
State	Published - Aug 27 2015

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KAUST Repository Item: Exported on 2020-10-01

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10.1109/IPFA.2015.7224436

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Lin, C.-P., Lyu, L.-S., Lin, C.-T., Liu, P.-S., Chang, W.-H., Li, L.-J., & Hou, T.-H. (2015). Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. In 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 476-479). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IPFA.2015.7224436

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title = "Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping",

abstract = "We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.",

author = "Chih-Pin Lin and Li-Syuan Lyu and Ching-Ting Lin and Pang-Shiuan Liu and Wen-Hao Chang and Lain-Jong Li and Tuo-Hung Hou",

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year = "2015",

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doi = "10.1109/IPFA.2015.7224436",

language = "English (US)",

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Lin, C-P, Lyu, L-S, Lin, C-T, Liu, P-S, Chang, W-H, Li, L-J & Hou, T-H 2015, Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. in 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers (IEEE), pp. 476-479. https://doi.org/10.1109/IPFA.2015.7224436

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. / Lin, Chih-Pin; Lyu, Li-Syuan; Lin, Ching-Ting et al.
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 476-479.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

AU - Lin, Chih-Pin

AU - Lyu, Li-Syuan

AU - Lin, Ching-Ting

AU - Liu, Pang-Shiuan

AU - Chang, Wen-Hao

AU - Li, Lain-Jong

AU - Hou, Tuo-Hung

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/8/27

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N2 - We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

AB - We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

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UR - http://ieeexplore.ieee.org/document/7224436

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U2 - 10.1109/IPFA.2015.7224436

DO - 10.1109/IPFA.2015.7224436

M3 - Conference contribution

SN - 9781479999286

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EP - 479

BT - 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

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