Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

Keyphrases

• HfO2 100%
• Resistive Switching 100%
• Grain Boundary 100%
• Resistive Random Access Memory (ReRAM) 100%
• Memory Structure 100%
• Conductive Atomic Force Microscopy (C-AFM) 50%
• In Situ 25%
• Dielectric 25%
• Device Level 25%
• High Density 25%
• Switching Phenomenon 25%
• Conductive Filament 25%
• Low Breakdown Voltage 25%
• Oxygen Vacancy 25%
• Metal-insulator-metal Structure 25%
• Nanometric Resolution 25%
• Microscope Measurement 25%

Material Science

• Resistive Random-Access Memory 100%
• Grain Boundary 100%
• Dielectric Material 50%
• Oxygen Vacancy 50%
• Metal-Insulator-Metal Structure 50%
• Density 50%

Physics

• Resistive Switching 100%
• Grain Boundaries 100%
• Oxygen Vacancy 25%
• Dielectrics 25%