Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

M. Lanza; K. Zhang; M. Porti; M. Nafra; Z. Y. Shen; L. F. Liu; J. F. Kang; D. Gilmer; G. Bersuker

doi:10.1063/1.3697648

Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafra, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker

Research output: Contribution to journal › Article › peer-review

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Abstract

Resistive switching (RS) phenomenon in the HfO 2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, using the enhanced conductive atomic force microscope (ECAFM), we have been able to obtain in situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that the conductive filaments exhibiting the RS are primarily formed at the grain boundaries, which were shown exhibiting especially low breakdown voltage due to their intrinsic high density of the oxygen vacancies. © 2012 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3697648
State	Published - Mar 19 2012
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures",

abstract = "Resistive switching (RS) phenomenon in the HfO 2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, using the enhanced conductive atomic force microscope (ECAFM), we have been able to obtain in situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that the conductive filaments exhibiting the RS are primarily formed at the grain boundaries, which were shown exhibiting especially low breakdown voltage due to their intrinsic high density of the oxygen vacancies. {\textcopyright} 2012 American Institute of Physics.",

author = "M. Lanza and K. Zhang and M. Porti and M. Nafra and Shen, {Z. Y.} and Liu, {L. F.} and Kang, {J. F.} and D. Gilmer and G. Bersuker",

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doi = "10.1063/1.3697648",

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T1 - Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

AU - Lanza, M.

AU - Zhang, K.

AU - Porti, M.

AU - Nafra, M.

AU - Shen, Z. Y.

AU - Liu, L. F.

AU - Kang, J. F.

AU - Gilmer, D.

AU - Bersuker, G.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2012/3/19

Y1 - 2012/3/19

N2 - Resistive switching (RS) phenomenon in the HfO 2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, using the enhanced conductive atomic force microscope (ECAFM), we have been able to obtain in situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that the conductive filaments exhibiting the RS are primarily formed at the grain boundaries, which were shown exhibiting especially low breakdown voltage due to their intrinsic high density of the oxygen vacancies. © 2012 American Institute of Physics.

AB - Resistive switching (RS) phenomenon in the HfO 2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, using the enhanced conductive atomic force microscope (ECAFM), we have been able to obtain in situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that the conductive filaments exhibiting the RS are primarily formed at the grain boundaries, which were shown exhibiting especially low breakdown voltage due to their intrinsic high density of the oxygen vacancies. © 2012 American Institute of Physics.

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DO - 10.1063/1.3697648

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

Abstract

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