Giant uniaxial piezoresistance in GMR perovskite La0.85Sr0.15MnO3

Ning Zhang*, Weiping Ding, Zaibing Guo, Wei Zhong, Dingyu Xing, Youwei Du

*Corresponding author for this work

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The uniaxial-pressure dependences of electric and magnetic properties have been investigated in perovskite-type La-Sr-Mn-O. A giant piezoresistance (GPR) effect and a remarkable pressure-induced increase of Tp, the onset of the metal-semiconductor-like (M-S) transition, have been observed. The piezoresistance value (PR) and the pressure coefficient of Tp are all larger by two orders of magnitude than that in the case of hydrostatic pressure. Piezoresistance and magnetoresistance peaks were found to locate at almost the same temperature. This fact suggests that GMR and GPR may originate from the same mechanism(s) and may be relative to lattice transformation(s).

Original languageEnglish (US)
Pages (from-to)319-323
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Issue number5-6
StatePublished - Aug 26 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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