Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy

T. Saiki*, K. Takeuchi, M. Kuwata-Gonokami, T. Mitsuyu, K. Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In the low exciton density regime, we study the optical nonlinearity in the exciton resonant region in ZnSe grown by MBE on a GaAs substrate. At low temperature, excitons in bulk ZnSe largely contribute to enhance the nonlinearity. Using reflection type polarization spectroscopy with weak picosecond pulses, we evaluate third-order susceptibility and obtain huge value of χ(3), over 10-2 esu. From a degenerate four-wave mixing experiment with different polarization combinations, it is found that this huge nonlinearity originates from the exciton-exciton interaction.

Original languageEnglish (US)
Pages (from-to)802-805
Number of pages4
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Feb 2 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this