Recently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.
|Original language||English (US)|
|Title of host publication||2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)|
|Number of pages||2|
|State||Published - Sep 23 2020|