Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

Ko Chun Lee; Jose Ramon Duran Retamal; Fei Xue; Bin Cheng; Hao Ling Tang; Ming Hui Chiu; Wei Jin Hu; Chih I. Wu; Mei Hsin Chen; Lain-Jong Li; Chen Hsin Lien; Jr-Hau He

doi:10.1109/VLSI-TSA48913.2020.9203707

Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

Ko Chun Lee, Jose Ramon Duran Retamal, Fei Xue, Bin Cheng, Hao Ling Tang, Ming Hui Chiu, Wei Jin Hu, Chih I. Wu, Mei Hsin Chen, Lain-Jong Li, Chen Hsin Lien, Jr-Hau He

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.

Original language	English (US)
Title of host publication	2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Publisher	IEEE
Pages	88-89
Number of pages	2
ISBN (Print)	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203707
State	Published - Sep 23 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-11-05

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10.1109/VLSI-TSA48913.2020.9203707

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Lee, K. C., Retamal, J. R. D., Xue, F., Cheng, B., Tang, H. L., Chiu, M. H., Hu, W. J., Wu, C. I., Chen, M. H., Li, L.-J., Lien, C. H., & He, J.-H. (2020). Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si. In 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (pp. 88-89). IEEE. https://doi.org/10.1109/VLSI-TSA48913.2020.9203707

@inproceedings{f7653813db3e49ccb28c4265ed3adf08,

title = "Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si",

abstract = "Recently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.",

author = "Lee, {Ko Chun} and Retamal, {Jose Ramon Duran} and Fei Xue and Bin Cheng and Tang, {Hao Ling} and Chiu, {Ming Hui} and Hu, {Wei Jin} and Wu, {Chih I.} and Chen, {Mei Hsin} and Lain-Jong Li and Lien, {Chen Hsin} and Jr-Hau He",

note = "KAUST Repository Item: Exported on 2020-11-05",

year = "2020",

month = sep,

day = "23",

doi = "10.1109/VLSI-TSA48913.2020.9203707",

language = "English (US)",

isbn = "9781728142326",

pages = "88--89",

booktitle = "2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)",

publisher = "IEEE",

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TY - GEN

T1 - Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

AU - Lee, Ko Chun

AU - Retamal, Jose Ramon Duran

AU - Xue, Fei

AU - Cheng, Bin

AU - Tang, Hao Ling

AU - Chiu, Ming Hui

AU - Hu, Wei Jin

AU - Wu, Chih I.

AU - Chen, Mei Hsin

AU - Li, Lain-Jong

AU - Lien, Chen Hsin

AU - He, Jr-Hau

N1 - KAUST Repository Item: Exported on 2020-11-05

PY - 2020/9/23

Y1 - 2020/9/23

N2 - Recently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.

AB - Recently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.

UR - http://hdl.handle.net/10754/665813

UR - https://ieeexplore.ieee.org/document/9203707/

UR - http://www.scopus.com/inward/record.url?scp=85093697740&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA48913.2020.9203707

DO - 10.1109/VLSI-TSA48913.2020.9203707

M3 - Conference contribution

SN - 9781728142326

SP - 88

EP - 89

BT - 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

PB - IEEE

ER -

Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

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