GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

Chao Shen; Changmin Lee; Tien Khee Ng; James S. Speck; Shuji Nakamura; Steven P. DenBaars; Ahmed Y. Alyamani; Munir M. Eldesouki; Boon S. Ooi

doi:10.1109/IPCon.2016.7831077

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

Chao Shen, Changmin Lee, Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. Eldesouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

Original language	English (US)
Title of host publication	2016 IEEE Photonics Conference (IPC)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	813-814
Number of pages	2
ISBN (Print)	9781509019069
DOIs	https://doi.org/10.1109/IPCon.2016.7831077
State	Published - Jan 30 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) (No. KACST TIC R2-FP-008), KAUST baseline funding (BAS/1/1614-01-01), and KACST-KAUST-UCSB Solid-State Lighting Program.

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10.1109/IPCon.2016.7831077

https://repository.kaust.edu.sa/bitstream/10754/622880/1/IPC-2016-EAMLD-CShen_V2.pdf

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Shen, C., Lee, C., Ng, T. K., Speck, J. S., Nakamura, S., DenBaars, S. P., Alyamani, A. Y., Eldesouki, M. M., & Ooi, B. S. (2017). GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode. In 2016 IEEE Photonics Conference (IPC) (pp. 813-814). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IPCon.2016.7831077

@inproceedings{87fbdf35804944b0bfabcca1804ca034,

title = "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode",

abstract = "A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.",

author = "Chao Shen and Changmin Lee and Ng, {Tien Khee} and Speck, {James S.} and Shuji Nakamura and DenBaars, {Steven P.} and Alyamani, {Ahmed Y.} and Eldesouki, {Munir M.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) (No. KACST TIC R2-FP-008), KAUST baseline funding (BAS/1/1614-01-01), and KACST-KAUST-UCSB Solid-State Lighting Program.",

year = "2017",

month = jan,

day = "30",

doi = "10.1109/IPCon.2016.7831077",

language = "English (US)",

isbn = "9781509019069",

pages = "813--814",

booktitle = "2016 IEEE Photonics Conference (IPC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Shen, C, Lee, C, Ng, TK, Speck, JS, Nakamura, S, DenBaars, SP, Alyamani, AY, Eldesouki, MM & Ooi, BS 2017, GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode. in 2016 IEEE Photonics Conference (IPC). Institute of Electrical and Electronics Engineers (IEEE), pp. 813-814. https://doi.org/10.1109/IPCon.2016.7831077

TY - GEN

T1 - GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

AU - Shen, Chao

AU - Lee, Changmin

AU - Ng, Tien Khee

AU - Speck, James S.

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

AU - Alyamani, Ahmed Y.

AU - Eldesouki, Munir M.

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) (No. KACST TIC R2-FP-008), KAUST baseline funding (BAS/1/1614-01-01), and KACST-KAUST-UCSB Solid-State Lighting Program.

PY - 2017/1/30

Y1 - 2017/1/30

N2 - A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

AB - A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

UR - http://hdl.handle.net/10754/622880

UR - http://ieeexplore.ieee.org/document/7831077/

UR - http://www.scopus.com/inward/record.url?scp=85014264241&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2016.7831077

DO - 10.1109/IPCon.2016.7831077

M3 - Conference contribution

SN - 9781509019069

SP - 813

EP - 814

BT - 2016 IEEE Photonics Conference (IPC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

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