Gateless AlGaN/GaN HEMT response to block co-polymers

B. S. Kang, G. Louche, R. S. Duran, Yves Gnanou, S. J. Pearton, F. Ren*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

Original languageEnglish (US)
Pages (from-to)851-854
Number of pages4
JournalSolid-State Electronics
Issue number5
StatePublished - May 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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