Gate work function modification using ultra-thin metal interlayers

H. N. Alshareef^*, K. Choi, H. C. Wen, H. R. Harris, H. Luan, P. Lysaght, P. Majhi, B. H. Lee

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Original language	English (US)
Pages	630
Number of pages	1
State	Published - 2005
Event	207th Meeting of the Electrochemical Society - Quebec, Canada Duration: May 15 2005 → May 20 2005

Conference	207th Meeting of the Electrochemical Society
Country/Territory	Canada
City	Quebec
Period	05/15/05 → 05/20/05

ASJC Scopus subject areas

@conference{13a3079d572a41d4983847eac6caeaf4,

title = "Gate work function modification using ultra-thin metal interlayers",

author = "Alshareef, {H. N.} and K. Choi and Wen, {H. C.} and Harris, {H. R.} and H. Luan and P. Lysaght and P. Majhi and Lee, {B. H.}",

year = "2005",

language = "English (US)",

pages = "630",

note = "207th Meeting of the Electrochemical Society ; Conference date: 15-05-2005 Through 20-05-2005",

}

TY - CONF

T1 - Gate work function modification using ultra-thin metal interlayers

AU - Alshareef, H. N.

AU - Choi, K.

AU - Wen, H. C.

AU - Harris, H. R.

AU - Luan, H.

AU - Lysaght, P.

AU - Majhi, P.

AU - Lee, B. H.

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=85104160212&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85104160212

SP - 630

T2 - 207th Meeting of the Electrochemical Society

Y2 - 15 May 2005 through 20 May 2005

ER -