Gate tunable giant anisotropic resistance in ultra-thin GaTe

Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang, Huaihong Guo, Chengbing QinLiantuan Xiao, Jing Zhang, Jianhao Chen, Zheng Han, Zhidong Zhang

Research output: Contribution to journalArticlepeer-review

75 Scopus citations


Anisotropy in crystals arises from different lattice periodicity along different crystallographic directions, and is usually more pronounced in two dimensional (2D) materials. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the recent research focuses. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity anisotropy between x and y directions of the 2D crystal can be gate tuned from several fold to over 103. This effect is further demonstrated to yield an anisotropic non-volatile memory behavior in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate-tunable giant anisotropic resistance effect pave the way for potential applications in nanoelectronics such as multifunctional directional memories in the 2D limit.
Original languageEnglish (US)
JournalNature Communications
Issue number1
StatePublished - May 24 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work is supported by the National Key R&D Program of China (2017YFA0206302), and is supported by the National Natural Science Foundation of China (NSFC) with Grant 11504385 and 51627801. T. Yang acknowledges supports from the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China (no. U1537204). L.T. Xiao acknowledges support from the National Key R&D Program of China (2017YFA0304203). H.H. Guo acknowledges NSFC Grant no. 51702146. Z. Han acknowledges the support from the Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices (no. KF201816).


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