Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

Ching Yuan Ho; Kai Yao Shih; Jr Hau He

doi:10.1016/j.mee.2009.08.009

Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

Ching Yuan Ho^*, Kai Yao Shih, Jr Hau He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The phenomenon of floating gate (FG) crystallization and extrinsic gate oxide breakdown (V_bd) are discussed using polysilazane-base inorganic material SOD (Spin-On-Dielectric) as shallow trench isolation (STI) filling for 50 nm flash memory fabrication. The pinholes are found along the FG grain boundary in wide active regions because of tensile stress induced by SOD material in STI process, thus gate oxide wears out by following wet cleaning steps. The chemical oxide formation during FG deposition can effectively inhibit gate oxide early breakdown. Moreover, FG sheet resistance (R_s) in 550 °C/air deposition condition can significantly reduce about 20% in comparison with 520 °C/O₂ and 400 °C/N₂ conditions.

Original language	English (US)
Pages (from-to)	580-583
Number of pages	4
Journal	Microelectronic Engineering
Volume	87
Issue number	4
DOIs	https://doi.org/10.1016/j.mee.2009.08.009
State	Published - Apr 2010
Externally published	Yes

Keywords

Floating gate
Polysilazane-base inorganic
Shallow trench isolation
Spin-On-Dielectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.mee.2009.08.009

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title = "Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling",

abstract = "The phenomenon of floating gate (FG) crystallization and extrinsic gate oxide breakdown (Vbd) are discussed using polysilazane-base inorganic material SOD (Spin-On-Dielectric) as shallow trench isolation (STI) filling for 50 nm flash memory fabrication. The pinholes are found along the FG grain boundary in wide active regions because of tensile stress induced by SOD material in STI process, thus gate oxide wears out by following wet cleaning steps. The chemical oxide formation during FG deposition can effectively inhibit gate oxide early breakdown. Moreover, FG sheet resistance (Rs) in 550 °C/air deposition condition can significantly reduce about 20% in comparison with 520 °C/O2 and 400 °C/N2 conditions.",

keywords = "Floating gate, Polysilazane-base inorganic, Shallow trench isolation, Spin-On-Dielectric",

author = "Ho, {Ching Yuan} and Shih, {Kai Yao} and He, {Jr Hau}",

year = "2010",

month = apr,

doi = "10.1016/j.mee.2009.08.009",

language = "English (US)",

volume = "87",

pages = "580--583",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "ELSEVIER SCIENCE BV",

number = "4",

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TY - JOUR

T1 - Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

AU - Ho, Ching Yuan

AU - Shih, Kai Yao

AU - He, Jr Hau

PY - 2010/4

Y1 - 2010/4

N2 - The phenomenon of floating gate (FG) crystallization and extrinsic gate oxide breakdown (Vbd) are discussed using polysilazane-base inorganic material SOD (Spin-On-Dielectric) as shallow trench isolation (STI) filling for 50 nm flash memory fabrication. The pinholes are found along the FG grain boundary in wide active regions because of tensile stress induced by SOD material in STI process, thus gate oxide wears out by following wet cleaning steps. The chemical oxide formation during FG deposition can effectively inhibit gate oxide early breakdown. Moreover, FG sheet resistance (Rs) in 550 °C/air deposition condition can significantly reduce about 20% in comparison with 520 °C/O2 and 400 °C/N2 conditions.

AB - The phenomenon of floating gate (FG) crystallization and extrinsic gate oxide breakdown (Vbd) are discussed using polysilazane-base inorganic material SOD (Spin-On-Dielectric) as shallow trench isolation (STI) filling for 50 nm flash memory fabrication. The pinholes are found along the FG grain boundary in wide active regions because of tensile stress induced by SOD material in STI process, thus gate oxide wears out by following wet cleaning steps. The chemical oxide formation during FG deposition can effectively inhibit gate oxide early breakdown. Moreover, FG sheet resistance (Rs) in 550 °C/air deposition condition can significantly reduce about 20% in comparison with 520 °C/O2 and 400 °C/N2 conditions.

KW - Floating gate

KW - Polysilazane-base inorganic

KW - Shallow trench isolation

KW - Spin-On-Dielectric

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U2 - 10.1016/j.mee.2009.08.009

DO - 10.1016/j.mee.2009.08.009

M3 - Article

AN - SCOPUS:75149170878

SN - 0167-9317

VL - 87

SP - 580

EP - 583

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

ER -

Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

Abstract

Keywords

ASJC Scopus subject areas

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