Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

C. L. Hinkle; R. V. Galatage; R. A. Chapman; E. M. Vogel; Husam N. Alshareef; C. Freeman; M. Christensen; E. Wimmer; H. Niimi; A. Li-Fatou; J. B. Shaw; J. J. Chambers

doi:10.1063/1.3701165

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam N. Alshareef, C. Freeman, M. Christensen, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers

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15 Scopus citations

Abstract

Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

Original language	English (US)
Pages (from-to)	153501
Journal	Applied Physics Letters
Volume	100
Issue number	15
DOIs	https://doi.org/10.1063/1.3701165
State	Published - Apr 9 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3701165

https://repository.kaust.edu.sa/bitstream/10754/552791/1/1.3701165.pdf

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Hinkle, C. L., Galatage, R. V., Chapman, R. A., Vogel, E. M., Alshareef, H. N., Freeman, C., Christensen, M., Wimmer, E., Niimi, H., Li-Fatou, A., Shaw, J. B., & Chambers, J. J. (2012). Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition. Applied Physics Letters, 100(15), 153501. https://doi.org/10.1063/1.3701165

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title = "Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition",

abstract = "Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.",

author = "Hinkle, {C. L.} and Galatage, {R. V.} and Chapman, {R. A.} and Vogel, {E. M.} and Alshareef, {Husam N.} and C. Freeman and M. Christensen and E. Wimmer and H. Niimi and A. Li-Fatou and Shaw, {J. B.} and Chambers, {J. J.}",

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doi = "10.1063/1.3701165",

language = "English (US)",

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Hinkle, CL, Galatage, RV, Chapman, RA, Vogel, EM, Alshareef, HN, Freeman, C, Christensen, M, Wimmer, E, Niimi, H, Li-Fatou, A, Shaw, JB & Chambers, JJ 2012, 'Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition', Applied Physics Letters, vol. 100, no. 15, pp. 153501. https://doi.org/10.1063/1.3701165

TY - JOUR

T1 - Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

AU - Hinkle, C. L.

AU - Galatage, R. V.

AU - Chapman, R. A.

AU - Vogel, E. M.

AU - Alshareef, Husam N.

AU - Freeman, C.

AU - Christensen, M.

AU - Wimmer, E.

AU - Niimi, H.

AU - Li-Fatou, A.

AU - Shaw, J. B.

AU - Chambers, J. J.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/4/9

Y1 - 2012/4/9

N2 - Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

AB - Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

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UR - http://scitation.aip.org/content/aip/journal/apl/100/15/10.1063/1.3701165

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M3 - Article

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SP - 153501

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

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