@inproceedings{c69b6e92814a49b6a72125a048dd6271,
title = "Gate first high-k/metal gate stacks with zero SiO x interface achieving EOT=0.59nm for 16nm application",
abstract = " Gate first 0.59nm EOT HfO x /metal gate stacks for 16 nm node application are demonstrated for the first time. By controlling O during HfO x deposition, {"}zero{"} low-k SiO x interface (ZIL) forms despite a 1020oC activation anneal. This 0.59nm EOT is a 30% improvement over a state of the art 32nm HK/MG technology [1]. We compare and demonstrate for the first time the improved scalability of ZIL HfO x vs. exotic higher-k. Transistors made with ZIL HfO x show good interfaces (SS=70-80 mV/dec, N it =5×10 10 /cm 2 ) and performance (10% I on -I off boost vs. EOT=0.95nm), despite mobility loss. Factors contributing to mobility loss in ZIL HfO x are discussed. ",
author = "J. Huang and D. Heh and P. Sivasubramani and Kirsch, {P. D.} and G. Bersuker and Gilmer, {D. C.} and Quevedo-Lopez, {M. A.} and Hussain, {Muhammad Mustafa} and P. Majhi and P. Lysaght and H. Park and N. Goel and C. Young and Park, {C. S.} and C. Park and M. Cruz and V. Diaz and Hung, {P. Y.} and J. Price and Tseng, {H. H.} and R. Jammy",
year = "2009",
month = nov,
day = "16",
language = "English (US)",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "34--35",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}