Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè; A. Pérez-Tomás; M. Placidi; J. Llobet; N. Baron; S. Chenot; Y. Cordier; J. C. Moreno; V. Iglesias; M. Porti; A. Bayerl; M. Lanza; M. Nafría

doi:10.1063/1.4748115

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, M. Nafría

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17 Scopus citations

Abstract

The gate leakage current of AlGaN/GaN (on silicon) high electron mobility transistor (HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale. © 2012 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	101
Issue number	9
DOIs	https://doi.org/10.1063/1.4748115
State	Published - Aug 27 2012
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale",

abstract = "The gate leakage current of AlGaN/GaN (on silicon) high electron mobility transistor (HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale. {\textcopyright} 2012 American Institute of Physics.",

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doi = "10.1063/1.4748115",

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T1 - Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

AU - Fontserè, A.

AU - Pérez-Tomás, A.

AU - Placidi, M.

AU - Llobet, J.

AU - Baron, N.

AU - Chenot, S.

AU - Cordier, Y.

AU - Moreno, J. C.

AU - Iglesias, V.

AU - Porti, M.

AU - Bayerl, A.

AU - Lanza, M.

AU - Nafría, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2012/8/27

Y1 - 2012/8/27

N2 - The gate leakage current of AlGaN/GaN (on silicon) high electron mobility transistor (HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale. © 2012 American Institute of Physics.

AB - The gate leakage current of AlGaN/GaN (on silicon) high electron mobility transistor (HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale. © 2012 American Institute of Physics.

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UR - http://www.scopus.com/inward/record.url?scp=84865840118&partnerID=8YFLogxK

U2 - 10.1063/1.4748115

DO - 10.1063/1.4748115

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

Abstract

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