We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0-1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n -type) and GaAs:C (p -type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.
Bibliographical noteFunding Information:
The authors acknowledge the partial financial support by the MERLION under Project No. 09.01.06 sponsored by the France Embassy in Singapore. This work was also partially supported by the European Commission Network of Excellence Program ISIS under Grant No. 26592 and the THALES@NTU laboratory. Assistance provided by C. Y. Ngo is also acknowledged.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)