GaN Nanowires Synthesized by Electroless Etching Method

Adel Najar; Dalaver H. Anjum; Tien Khee Ng; Boon S. Ooi; Ahmed Ben Slimane

doi:10.1364/CLEO_AT.2012.JTh2A.101

GaN Nanowires Synthesized by Electroless Etching Method

Adel Najar, Dalaver H. Anjum, Tien Khee Ng, Boon S. Ooi, Ahmed Ben Slimane

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics 2012
Publisher	The Optical Society
ISBN (Print)	978-1-55752-943-5
DOIs	https://doi.org/10.1364/CLEO_AT.2012.JTh2A.101
State	Published - 2012

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KAUST Repository Item: Exported on 2020-10-01

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10.1364/CLEO_AT.2012.JTh2A.101

https://repository.kaust.edu.sa/bitstream/10754/310652/1/CLEO_SI-2012-JTh2A.101.pdf

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@inproceedings{afd5200b39ba467196be5e571dbe29a4,

title = "GaN Nanowires Synthesized by Electroless Etching Method",

abstract = "Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.",

author = "Adel Najar and Anjum, {Dalaver H.} and Ng, {Tien Khee} and Ooi, {Boon S.} and {Ben Slimane}, Ahmed",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2012",

doi = "10.1364/CLEO_AT.2012.JTh2A.101",

language = "English (US)",

isbn = "978-1-55752-943-5",

booktitle = "Conference on Lasers and Electro-Optics 2012",

publisher = "The Optical Society",

address = "United States",

}

TY - GEN

T1 - GaN Nanowires Synthesized by Electroless Etching Method

AU - Najar, Adel

AU - Anjum, Dalaver H.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Ben Slimane, Ahmed

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012

Y1 - 2012

N2 - Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

AB - Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

UR - http://hdl.handle.net/10754/310652

UR - http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2012-JTh2A.101

U2 - 10.1364/CLEO_AT.2012.JTh2A.101

DO - 10.1364/CLEO_AT.2012.JTh2A.101

M3 - Conference contribution

SN - 978-1-55752-943-5

BT - Conference on Lasers and Electro-Optics 2012

PB - The Optical Society

ER -

GaN Nanowires Synthesized by Electroless Etching Method

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