GaN Nanowire Arrays for High-Output Nanogenerators

Chi-Te Huang; Jinhui Song; Wei-Fan Lee; Yong Ding; Zhiyuan Gao; Yue Hao; Lih-Juann Chen; Zhong Lin Wang

doi:10.1021/ja909863a

GaN Nanowire Arrays for High-Output Nanogenerators

Chi-Te Huang, Jinhui Song, Wei-Fan Lee, Yong Ding, Zhiyuan Gao, Yue Hao, Lih-Juann Chen, Zhong Lin Wang

Research output: Contribution to journal › Article › peer-review

292 Scopus citations

Abstract

Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

Original language	English (US)
Pages (from-to)	4766-4771
Number of pages	6
Journal	Journal of the American Chemical Society
Volume	132
Issue number	13
DOIs	https://doi.org/10.1021/ja909863a
State	Published - Apr 7 2010
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to the National Science Council of Taiwan, Republic of China, for a fellowship to study abroad (C.-T.H.) (N5C97-2917-1-007-110).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "GaN Nanowire Arrays for High-Output Nanogenerators",

abstract = "Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. {\textcopyright} 2010 American Chemical Society.",

author = "Chi-Te Huang and Jinhui Song and Wei-Fan Lee and Yong Ding and Zhiyuan Gao and Yue Hao and Lih-Juann Chen and Wang, {Zhong Lin}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to the National Science Council of Taiwan, Republic of China, for a fellowship to study abroad (C.-T.H.) (N5C97-2917-1-007-110). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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T1 - GaN Nanowire Arrays for High-Output Nanogenerators

AU - Huang, Chi-Te

AU - Song, Jinhui

AU - Lee, Wei-Fan

AU - Ding, Yong

AU - Gao, Zhiyuan

AU - Hao, Yue

AU - Chen, Lih-Juann

AU - Wang, Zhong Lin

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to the National Science Council of Taiwan, Republic of China, for a fellowship to study abroad (C.-T.H.) (N5C97-2917-1-007-110). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2010/4/7

Y1 - 2010/4/7

N2 - Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

AB - Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

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GaN Nanowire Arrays for High-Output Nanogenerators

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