GaN nano-membrane for optoelectronic and electronic device applications

Boon S. Ooi, Rami T. Elafandy, Ahmed Ben Slimane, M. Abdul Majid, Tien Khee Ng

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.
Original languageEnglish (US)
Title of host publicationAsia Communications and Photonics Conference 2014
PublisherThe Optical Society
ISBN (Print)9781557528520
StatePublished - 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01


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