GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

Yu Hsuan Hsiao; Meng-Lin Tsai; Jr-Hau He

doi:10.1109/tia.2014.2360984

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

Yu Hsuan Hsiao, Meng-Lin Tsai, Jr-Hau He

Research output: Contribution to journal › Article › peer-review

Abstract

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

Original language	English (US)
Pages (from-to)	1277-1283
Number of pages	7
Journal	IEEE Transactions on Industry Applications
Volume	51
Issue number	2
DOIs	https://doi.org/10.1109/tia.2014.2360984
State	Published - Mar 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the National Science Council of Taiwan under Grant 102-2628-M-002-006-MY3 and Grant 101-2221-E-002-115-MY2 and in part by National Taiwan University under Grant 10R70823.

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abstract = "Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. {\textcopyright} 1972-2012 IEEE.",

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GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

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