GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

Yu Hsuan Hsiao, Meng-Lin Tsai, Jr-Hau He

Research output: Contribution to journalArticlepeer-review


Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.
Original languageEnglish (US)
Pages (from-to)1277-1283
Number of pages7
JournalIEEE Transactions on Industry Applications
Issue number2
StatePublished - Mar 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the National Science Council of Taiwan under Grant 102-2628-M-002-006-MY3 and Grant 101-2221-E-002-115-MY2 and in part by National Taiwan University under Grant 10R70823.


Dive into the research topics of 'GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management'. Together they form a unique fingerprint.

Cite this