TY - GEN
T1 - Gallium nitride on gallium oxide substrate for integrated nonlinear optics
AU - Awan, Kashif M.
AU - Dolgaleva, Ksenia
AU - Mumthaz Muhammed, Mufasila
AU - Roqan, Iman S.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2017/11/22
Y1 - 2017/11/22
N2 - Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).
AB - Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).
UR - http://hdl.handle.net/10754/626199
UR - http://ieeexplore.ieee.org/document/8090587/
UR - http://www.scopus.com/inward/record.url?scp=85040535019&partnerID=8YFLogxK
U2 - 10.1109/PN.2017.8090587
DO - 10.1109/PN.2017.8090587
M3 - Conference contribution
AN - SCOPUS:85040535019
SN - 9781538621929
BT - 2017 Photonics North (PN)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -