@inproceedings{51f97469bdff410495d035ae8982df85,
title = "GaInNAs QW with GaNAs intermediate layer for long wavelength laser",
abstract = "In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.",
keywords = "GaInNAs, long wavelength lasers, quantum well",
author = "F. Maskuriy and Alias, {M. S.} and Mitani, {S. M.} and Manaf, {A. A.}",
year = "2011",
doi = "10.1109/ISIEA.2011.6108787",
language = "English (US)",
isbn = "9781457714184",
series = "2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011",
pages = "610--613",
booktitle = "2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011",
note = "2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011 ; Conference date: 25-09-2011 Through 28-09-2011",
}