GaInNAs QW with GaNAs intermediate layer for long wavelength laser

F. Maskuriy; M. S. Alias; S. M. Mitani; A. A. Manaf

doi:10.1109/ISIEA.2011.6108787

GaInNAs QW with GaNAs intermediate layer for long wavelength laser

F. Maskuriy^*, M. S. Alias, S. M. Mitani, A. A. Manaf

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T ₀ of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.

Original language	English (US)
Title of host publication	2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011
Pages	610-613
Number of pages	4
DOIs	https://doi.org/10.1109/ISIEA.2011.6108787
State	Published - 2011
Externally published	Yes
Event	2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011 - Langkawi, Malaysia Duration: Sep 25 2011 → Sep 28 2011

Other

Other	2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011
Country/Territory	Malaysia
City	Langkawi
Period	09/25/11 → 09/28/11

Keywords

GaInNAs
long wavelength lasers
quantum well

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISIEA.2011.6108787

Cite this

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title = "GaInNAs QW with GaNAs intermediate layer for long wavelength laser",

abstract = "In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.",

keywords = "GaInNAs, long wavelength lasers, quantum well",

author = "F. Maskuriy and Alias, {M. S.} and Mitani, {S. M.} and Manaf, {A. A.}",

year = "2011",

doi = "10.1109/ISIEA.2011.6108787",

language = "English (US)",

isbn = "9781457714184",

pages = "610--613",

booktitle = "2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011",

note = "2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011 ; Conference date: 25-09-2011 Through 28-09-2011",

}

Maskuriy, F, Alias, MS, Mitani, SM & Manaf, AA 2011, GaInNAs QW with GaNAs intermediate layer for long wavelength laser. in 2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011., 6108787, pp. 610-613, 2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011, Langkawi, Malaysia, 09/25/11. https://doi.org/10.1109/ISIEA.2011.6108787

TY - GEN

T1 - GaInNAs QW with GaNAs intermediate layer for long wavelength laser

AU - Maskuriy, F.

AU - Alias, M. S.

AU - Mitani, S. M.

AU - Manaf, A. A.

PY - 2011

Y1 - 2011

N2 - In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.

AB - In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.

KW - GaInNAs

KW - long wavelength lasers

KW - quantum well

UR - http://www.scopus.com/inward/record.url?scp=84855658211&partnerID=8YFLogxK

U2 - 10.1109/ISIEA.2011.6108787

DO - 10.1109/ISIEA.2011.6108787

M3 - Conference contribution

AN - SCOPUS:84855658211

SN - 9781457714184

SP - 610

EP - 613

BT - 2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011

T2 - 2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011

Y2 - 25 September 2011 through 28 September 2011

ER -

GaInNAs QW with GaNAs intermediate layer for long wavelength laser

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Keywords

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