Abstract
In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.
Original language | English (US) |
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Title of host publication | 2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011 |
Pages | 610-613 |
Number of pages | 4 |
DOIs | |
State | Published - 2011 |
Externally published | Yes |
Event | 2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011 - Langkawi, Malaysia Duration: Sep 25 2011 → Sep 28 2011 |
Other
Other | 2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011 |
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Country/Territory | Malaysia |
City | Langkawi |
Period | 09/25/11 → 09/28/11 |
Keywords
- GaInNAs
- long wavelength lasers
- quantum well
ASJC Scopus subject areas
- Electrical and Electronic Engineering